Product Description

The AccuThermo AW*20V is a stand alone Vacuum RTP (Rapid Thermal Processing) system, which uses high intensity visible radiation to heat single wafer for short process periods of time at precisely controlled temperatures. The process periods are typically 1‑**0 seconds in duration, although periods of up to ***9 seconds can be selected. These capabilities, combined with the heating chamber's cold-wall design and superior heating uniformity, provide significant advantages over conventional furnace processing.



Key Features:

       Vacuum capability RTP/RTA/RTO/RTNsystem withTop and bottom High-intensity visible radiation Tungsten halogen lamp heating for fast heating rates with good repeatability performance and long lamp lifetime.

       Scattered IR light by special gold plated Al chamber surface.

       Allwin*1 advanced Software package with real time control technologies and many useful functions.

       Consistent wafer-to-wafer process cycle repeatability.

       Cooling N2 (Or CDA) flows around the lamps and quartz isolation tube for fast cooling rates

       Up to five gas lines with 4 MFCs and shut-off valves

       Energy efficient.

       Made in U.S.A.

       Small footprint



Specifications:

 

• Wafer sizes: Small pieces, 2", 3", 4", 5", 6", 8" wafer capability
• Vacuum Pressure: *0mTorr to *3 Torr or *3 Torr to **0 Torr
• Recommended ramp up rate:  Programmable, *0°C to **0°C per second. Maximum Rate: **0°C (NOT RECOMMENDED)
• Recommended steady state duration: ****0 seconds per step.
• Ramp down rate:  Non-programmable, *0°C to **0°C per second. 
• Recommended steady state temperature range:  **0°C - ***0°C. Maxim ***0°C (NOT RECOMMENDED)
• Special quick response K-Type TC temperature accuracy: ±1°C, when calibrated against an instrumented thermocouple wafer.
• Thermocouple temperature accuracy: ±0.5°C with rapid response.
• Temperature repeatability: ±0.5°C or better at ***0°C wafer-to-wafer.  (Repetition specifications are based on a ***-wafer set.)
• Temperature uniformity: ±8°C across a 8" (**0 mm) wafer at ***0°C.  (This is a one sigma deviation **0 angstrom oxide.)  For a titanium silicide process, no more than 6% increase in non-uniformity during the first anneal at **0°C to **0°C.
• Process/Purge gas s: Any inert and/or non-toxic gas regulated to *0 PSIG and pre-filtered to 1 micron. Typically, N2, O2), Ar, He, forming gas, NH3, N2O2 are used.