Product Description

Features
● ASIC dual IGBT driver
● Suitable for all IGBTs up to ***0V/***0V
● Half-bridge mode select,also two independent
single drives
● Short circuit and over current protection by
VCEsat monitoring
● Isolation due to nanometer amorphous transformer
● Supply undervoltage protection (<*2.5V)
● Error memory
● Error soft turn-off
● Driver interlock top/bottom in half-bridge
mode
● Dead time adjustable
● Internal isolated DC/DC power supply
● ±*5A peak current output
● IGBT gate drive voltage**5V/*9V
● **0ns signal conversion time
● **0ns error signal feedback time
● **0ns narrow pulse inhibit eliminate radio
frequency interference
● Max. working frequency **0kHz
● Error chain function, low level active
● Clearance distance from primary side to
secondary side is *9mm
● Provide surface-mounted model to fit for
mass production