abcd

A,B,C,Zambia

Free Member

Mono-crystalline 5'' silicon wafers

Zambia

1

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Product Specification

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Product Description

1. Dimensions of the side - 125 +/- 0,5 mm 2. Diagonal - 150 + /- 1,0 mm 3. Growth Method - CZ 4. Crystal Orientation - (100) +/- 1,0° 5. Conductivity Type - P 6. LIFE TIME - >5 µs 7. Dopant - Boron 8. RESISTIVITY - 0,1-0,5 Ohm*cm 9. Resistivity gradient - 20 % 10. Oxygen concentration - <1*1018At/cm3 11. Carbon concentration - <5*1016At/cm3 12. Normal angle variation - <0,5 degrees 13. Edge orientation - <001> 14. Non-parallelism - <0,13 mm 15. Side length tolerance - <1,0 mm 16. Off orientation of crystal - 0+/-2 degrees 17. Surface and edge profile - As cut and cleaned 18. Thickness - 240 +/- 30 µm 19. TTV - <50 µm 20. Bow - <50 µm 21. Warp - <50 µm 22. Allowable surface saw damage - <10 µm 23. Edge defect Length - <1 mm, depth <0,5 mm 24. Etching - none 25. Contamination - none

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abcd

A, B, C, Zambia

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