Product Description

Features
*4K bit Ferroelectric Nonvolatile RAM
• Organized as 8,**2 x 8 bits
• High Endurance **0 Trillion (***4) Read/Writes
• *8 Year Data Retention (@********************elay™ Writes
• Advanced High-Reliability Ferroelectric Process
Very Fast Serial Peripheral Interface - SPI
• Up to *0 MHz Frequency
• Direct Hardware Replacement for EEPROM
• SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1)
Sophisticated Write Protection Scheme
• Hardware Protection
• Software Protection
Low Power Consumption
• Low Voltage Operation 2.**3.*5V
• **0 μA Active Current (1 MHz)
• 3 μA (typ.) Standby Current
Industry Standard Configuration
• Industrial Temperature **0°C to **5°C
• *-pin "Green"/RoHS SOIC and TDFN Packages

Description
The FM*5CL*4B is a **-kilobit nonvolatile memory
employing an advanced ferroelectric process. A
ferroelectric random access memory or F-RAM is
nonvolatile and performs reads and writes like a
RAM. It provides reliable data retention for *8 years
while eliminating the complexities, overhead, and
system level reliability problems caused by
EEPROM and other nonvolatile memories.
The FM*5CL*4B performs write operations at bus
speed. No write delays are incurred. Data is written to
the memory array immediately after each byte has
been successfully transferred to the device. The next
bus cycle may commence immediately without the
need for data polling. In addition, the product offers
substantial write endurance compared with other
nonvolatile memories. The FM*5CL*4B is capable
of supporting ***4 read/write cycles, or **0 million
times more write cycles than EEPROM.