Product Description

■ DESCRIPTION

MB*5RS*4 is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,**2 words ×

8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile

memory cells.

MB*5RS*4 adopts the Serial Peripheral Interface (SPI).

The MB*5RS*4 is able to retain data without using a back-up battery, as is needed for SRAM.

The memory cells used in the MB*5RS*4 can be used for ***2 read/write operations, which is a significant

improvement over the number of read and write operations supported by Flash memory and E2PROM.

MB*5RS*4 does not take long time to write data like Flash memories or E2PROM, and MB*5RS*4 takes

no wait time.

■ FEATURES

• Bit configuration : 8,**2 words × 8 bits

• Serial Peripheral Interface : SPI (Serial Peripheral Interface)

Correspondent to SPI mode 0 (0, 0) and mode 3 (1, 1)

• Operating frequency : *0 MHz (Max)

• High endurance : ***2 times / byte

• Data retention : *0 years ( + *5 °C), *5 years ( + *5 °C), over **0 years ( + *5 °C)

• Operating power supply voltage : 2.7 V to 3.6 V

• Low power consumption : Operating power supply current 1.5 * (*@********************ndby current 5 μA (Typ)

• Operation ambient temperature range : − *0 °C to **5 °C

• Package : *-pin plastic SOP (FPT*8P-M*2) RoHS compliant

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