Product Description

Product Detail:

FEATURES
· High power gain
· Low intermodulation distortion
· Easy power control
· Good thermal stability
· Withstands full load mismatch
· Gold metallization ensures excellent reliability.

DESCRIPTION
Silicon N-channel enhancement mode vertical D-MOS transistor
designed for large signal amplifier
applications in the HF/VHF frequency
range.
The transistor has a *-lead, SOT**3
flange envelope, with a ceramic cap.
All leads are isolated from the flange.
A marking code, showing gate-source
voltage (VGS) information is provided
for matched pair applications. Refer
to the 'General' section for further
information.