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RF Power Field-Effect Transistor
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RF Power Field-Effect Transistor

FOB Price

Get Latest Price

( Negotiable )

|

1 Piece Minimum Order

Country:

China

Model No:

MRF151G

FOB Price:

( Negotiable ) Get Latest Price

Place of Origin:

ShenZhen Of China

Price for Minimum Order:

-

Minimum Order Quantity:

1 Piece

Packaging Detail:

-

Delivery Time:

1-2 Business Days

Supplying Ability:

1000 Piece per Day

Payment Type:

Western Union, T/T

Product Group :

-

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Free Member

Contact Person Mr. Allen

Sungang West Rd Rd, Shenzhen, Guangdong

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Product Description

 The RF MOSFET Line
 
 N–Channel Enhancement–Mode MOSFET

Designed for broadband commercial and military applications at frequencies to **5 MHz.The high power, high gain and broadband performance of this device makes possible solid state transmitters

The high power, high gain and broadband performance of this
device makes possible solid state transmitters for FM broadcast or TV channel
frequency bands.
  • Guaranteed Performance at **5 MHz, *0 V:
Output Power — **0 W
Gain — *4 dB (*6 dB Typ)
Efficiency — *0%
• Low Thermal Resistance — 0.*5°C/W
• Ruggedness Tested at Rated Output Power
• Nitride Passivated Die for Enhanced Reliability

Country: China
Model No: MRF151G
FOB Price: ( Negotiable ) Get Latest Price
Place of Origin: ShenZhen Of China
Price for Minimum Order: -
Minimum Order Quantity: 1 Piece
Packaging Detail: -
Delivery Time: 1-2 Business Days
Supplying Ability: 1000 Piece per Day
Payment Type: Western Union, T/T
Product Group : -

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Mr. Allen < Novelty Electronics Limited >

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