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AMA Technology Co., Ltd ( Southern Electronics Tech Ltd )

Hua qiang Road,Shenzhen,Guangdong,China China

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Products: 15

HF/VHF power MOS transistor

HF/VHF power MOS transistor ------BLF175 Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applicatio

HF/VHF power MOS transistor

HF/VHF power MOS transistor------BLF177 designed for industrial and military applications in the HF/VHF frequency range.

RF Power Field Effect Transistor N-Channel Enhancement -Mode MOSFETs

RF Power Field Effect Transistor N-Channel Enhancement -Mode MOSFETs------MRF154 Specified 50 Volts , 30MHz Characteristics

VHF BAND POWER AMPLIFIER APPLICATIONS

TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE ------2SC2782A------VHF BAND POWER AMPLIFIER APPLICATIONS

Thermally-Enhanced High Power RF LDMOS FET 300 W, 470 860 MHz

Thermally-Enhanced High Power RF LDMOS FET 300 W, 470 860 MHz-----PTFA043002E;intended for analog and digital broadcast, including 8VSB and COFD

RF POWER TRANSISTORS

RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs-----SD2933 It is intended for use in 50 V DC large signal applications up to 150 MHz

RF POWER TRANSISTORS

RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs -----SD2931 is intended for use in 50V dc large signal applications up to 230 MHz

Silicon MOSFET Power Transistor 30MHz, 70W

RF POWER MOS FET--RD70HHF1--Silicon MOSFET Power Transistor 30MHz, 70W is a MOS FET type transistor specifically designed for HF High power amplifie

RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE

RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE ------ARF1501 is an RF power transistor designed for very high power scientific, commercial , medical and

Thermally-Enhanced High Power RF LDMOS FETs 200 W, 1930 1990 MHz

Thermally-Enhanced High Power RF LDMOS FETs 200 W, 1930 1990 MHz ------PTFA192001E intended for single- and two-carrier WCDMA and CDMA application

RF POWER VERTICAL MOSFET

RF POWER VERTICAL MOSFET------VRF150MP is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military app

1000 Watts, 45 Volts, Pulsed Avionics 1090 MHz

1000 Watts, 45 Volts, Pulsed Avionics 1090 MHz -----TPR1000 ; designed for pulsed systems in the frequency band 1090 MHz.

X-Band Internally Matched FET

X-Band Internally Matched FET------FLM8596-15F ; is a power GaAs FET that is internally matched for standard communication bands to provide optimum

The RF MOSFET Line RF Power Field Effect Transistors

The RF MOSFET Line RF Power Field Effect Transistors N Channel Enhancement Mode Lateral MOSFETs------MRF373

RF Power Field Effect Transistor NChannel EnhancementMode Lateral MO

RF Power Field Effect Transistor N Channel Enhancement Mode Lateral MOSFET ----- MRF1513NT1 ;Excellent Thermal Stability

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    Eva < AMA Technology Co., Ltd ( Southern Electronics Tech Ltd ) >

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