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2"Free Standing Gan Substrates
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2"Free Standing Gan Substrates

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Contact Person Yao

No. 218, Xinghu Street, Suzhou Industrial Park, Suzhou, Jiangsu, China, suzhou, Jiangsu

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Product Description

Applications:

Blue LDs(**5nm < **0_**5nm>) can be used for high-density data storage, laser print, laser display, laser projection camera, etc.
GaN-based MQWs LDs
Short wavelength laser: Green/UV/Deep UV

Specifications:

ItemGaN-FS-N
Dimensions *0.8mm ± 1mm
Marco Defect DensityA Level≤ 2 cm*2
B Level> 2 cm*2
Thickness**0 ± *0 μ M
OrientationC-axis(***1) ± 0.5°
Orientation Flat(****0) ± 0.5° , *8.0 ± 1.0mm
Secondary Orientation Flat(****0) ± 3° , 9.0 ± 1.0mm
TTV(Total Thickness Variation)≤ *5 μ M
BOW≤ *0 μ M



Conduction TypeN-type
Resistivity(**0K)< 0.5 Ω@********************"color: rgb(*4, *4, *4); font-family: Arial, Verdana, sans-serif; font-size: *2px; line-height: normal;"> Dislocation DensityLess than 5X**6 cm*2
Useable Surface Area> *0%
PolishingFront Surface: Ra < 0.5nm. Epi-ready polished
Back Surface: 1. Fine ground, Ra < *0nm, 2. Rough grinded
PackagePackaged in a class **0 clean room environment, in single wafer containers, under a nitrogen atmosphere.

Item GaN-FS-N GaN-FS-SI
Dimensions *0.8mm ± 1mm
Thickness **0 ± *5 µm
Useable Surface Area LD Level > *0%
LED Level > *8%
Orientation C-axis(***1) ± 0.5°
Orientation Flat (****0) ± 0.5°, *6.0 ± 1.0mm
Secondary Orientation Flat (****0) ± 3°, 8.0 ± 1.0mm
TTV(Total Thickness Variation) ≤*5 µm
BOW ≤*0 µm
Conduction Type N-type Semi-Insulating
Resistivity(**0K) < 0.5 Ω

Country: China
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Yao < Suzhou Nanowin Science and Technology Co., Ltd >

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