FOB Price
Get Latest Price|
Minimum Order
Place of Origin:
-
Price for Minimum Order:
-
Minimum Order Quantity:
-
Packaging Detail:
-
Delivery Time:
-
Supplying Ability:
-
Payment Type:
-
Contact Person Mr. charlie
donghuan, Shenzhen, Guangdong
General Characteristics Features Product Multicrystalline silicon wafer Growth Method Directional solidification Conductivity Type P type Dopant Boron Resistivity 1~3Ω.cm Oxygen Content 1Ã*0 *8 atom/cm 3 Carbon Content 4Ã*0 *7 atom/cm 3 Structural Characteristics Features Side **6.0mm ± 0.5mm Corner diagonal 1.5mm ± 0.5mm Life time 2us*3us Corner Angle *5°±*0° Thickness **0±*0Î&frac*4;m Surface No stain or splash on surface Mechanical Characteristics Features TTV â¤*0Î&frac*4;m Bow â¤*0Î&frac*4;m Surface No defect Saw Mark â¤*5Î&frac*4;m
