Description

The " Waltcher**0" furnace is used for melting of the initial raw material, for growing the single crystal of sapphire from the melt by method of Kyropoulos.

Weight of ingot - *0 kgs.

Process chamber dimensions internal diameter, mm **0
  - height, mm **0

Maximal temperature in the crucible, '°C ***0

Seed rod lifting speed, mm/hour 0,**2,0

Maximum seed rod lifting force, kN 2,0

Supply voltage of the seed rod lifting electric motor, V *4

Frequency of the seed rod reverse rotation, rev/min ***0

Water pressure with the consumption 6 m3/h, not less, MPa 0,2

Water temperature at the input, not above, °C *5

 Water temperature at the output, not above, °C *0

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Our furnaces have European sertificate of quality CE.

Sapphire, raised in our furnaces have stable phisic charcteristics : high level of purity and homogeneity, low density of dislocation (lower than ***0 pcs/sm?), low inner intensity, mass from *0 up to *5 kgs.

Also we providing teaching, technological support for specialists of growing crystals in our production site.