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A3V09H521-24S A3V09H520-24S N-channel Enhancement Mode Lateral MOSFETs airfast RF Power LDMOS Transisitors A3V09H521-24S A3V09H520-24S N-channel Enhancement Mode Lateral MOSFETs airfast RF Power LDMOS Transisitors
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A3V09H521-24S A3V09H520-24S N-channel Enhancement Mode Lateral MOSFETs airfast RF Power LDMOS Transisitors

FOB Price

Get Latest Price

31 ~ 40 / Unit

|

10 Unit Minimum Order

Country:

China

Model No:

A3V09H520-24S

FOB Price:

31 ~ 40 / Unit Get Latest Price

Place of Origin:

Shenzhen China

Price for Minimum Order:

31 per Unit

Minimum Order Quantity:

10 Unit

Packaging Detail:

In Tape and Reel.

Delivery Time:

1-3days FOB Shenzhen

Supplying Ability:

2000 Unit per Week

Payment Type:

T/T, Western Union, PayPal

Product Group :

IC

Contact Now
Shenzhen Yuanlong Microwave Electronics Co., Ltd.

Shenzhen Yuanlong Microwave Electronics Co., Ltd.

China

Free Member

Contact Person Mr. Yuanlong

19B hangdu mansion huafu road futian district, Shenzhen, Guangdong

Contact Now

Product Specification

  • Brand Name: Original

Product Description

Product Description:

This 107W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering  the frequency range 720 to 960 MHz.

Model No. : A3V09H521-24S  / A3V09H520-24S
Instock: 2000 units


Features:
Advanced high performance in-- package Doherty
Greater negative gate -- source voltage range for improved Class C operation
Designed for digital predistortion error correction systems

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Country: China
Model No: A3V09H520-24S
FOB Price: 31 ~ 40 / Unit Get Latest Price
Place of Origin: Shenzhen China
Price for Minimum Order: 31 per Unit
Minimum Order Quantity: 10 Unit
Packaging Detail: In Tape and Reel.
Delivery Time: 1-3days FOB Shenzhen
Supplying Ability: 2000 Unit per Week
Payment Type: T/T, Western Union, PayPal
Product Group : IC

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