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FLL357ME Fujitsu FLL357 L-Band RF Power Transistor Medium High Power GaAs FET
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FLL357ME Fujitsu FLL357 L-Band RF Power Transistor Medium High Power GaAs FET
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FLL357ME Fujitsu FLL357 L-Band RF Power Transistor Medium High Power GaAs FET

FOB Price

Get Latest Price

45 ~ 50 / Piece

|

10 Piece Minimum Order

Country:

China

Model No:

FLL357ME

FOB Price:

45 ~ 50 / Piece Get Latest Price

Place of Origin:

Shenzhen China

Price for Minimum Order:

45 per Piece

Minimum Order Quantity:

10 Piece

Packaging Detail:

Vaccum plastic Pack

Delivery Time:

7 days FOB Shenzhen

Supplying Ability:

1000 Piece per Month

Payment Type:

T/T, Western Union, PayPal

Product Group :

IC

Contact Now
Shenzhen Yuanlong Microwave Electronics Co., Ltd.

Shenzhen Yuanlong Microwave Electronics Co., Ltd.

China

Free Member

Contact Person Mr. Yuanlong

19B hangdu mansion huafu road futian district, Shenzhen, Guangdong

Contact Now

Product Description

Model No. :    FLL357ME   L357

Description : The FLL351ME is a Power GaAs FET that is specifically designed to provide high power at L-Band frequencies with gain, linearity and efficiency superior to that of silicon devices.

Features   
High Output Power: P1dB=35.5dBm (Typ.)
High Gain: G1dB=11.5dB (Typ.)
High PAE: ηadd=46% (Typ.)
Proven Reliability
Hermetically Sealed Package
Brand : Fujitsu
image

Country: China
Model No: FLL357ME
FOB Price: 45 ~ 50 / Piece Get Latest Price
Place of Origin: Shenzhen China
Price for Minimum Order: 45 per Piece
Minimum Order Quantity: 10 Piece
Packaging Detail: Vaccum plastic Pack
Delivery Time: 7 days FOB Shenzhen
Supplying Ability: 1000 Piece per Month
Payment Type: T/T, Western Union, PayPal
Product Group : IC

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