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MRFE6S9160HSR3 MRFE6S9160HR3 MRFE6S9160HS N-channel Enhancement Mode Lateral MOSFETs RF Power Field Effect Transisitors MRFE6S9160HSR3 MRFE6S9160HR3 MRFE6S9160HS N-channel Enhancement Mode Lateral MOSFETs RF Power Field Effect Transisitors
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MRFE6S9160HSR3 MRFE6S9160HR3 MRFE6S9160HS N-channel Enhancement Mode Lateral MOSFETs RF Power Field Effect Transisitors

FOB Price

Get Latest Price

20 ~ 30 / Unit

|

10 Unit Minimum Order

Country:

China

Model No:

MRF7S38075HS

FOB Price:

20 ~ 30 / Unit Get Latest Price

Place of Origin:

Shenzhen China

Price for Minimum Order:

20 per Unit

Minimum Order Quantity:

10 Unit

Packaging Detail:

Tape and Reel

Delivery Time:

1-3 Days FOB Shenzhen

Supplying Ability:

2000 Unit per Week

Payment Type:

T/T, Western Union, PayPal

Product Group :

IC

Contact Now
Shenzhen Yuanlong Microwave Electronics Co., Ltd.

Shenzhen Yuanlong Microwave Electronics Co., Ltd.

China

Free Member

Contact Person Mr. Yuanlong

19B hangdu mansion huafu road futian district, Shenzhen, Guangdong

Contact Now

Product Description

Product Descriprtion:
Model No. MRFE6S***0HSR3 / MRFE6S***0HR3 / MRFE6S***0HS 
Designed for N-CDMA, GSM and GSM EDGE base station applications with frequencies from **5 to **0 MHz. Suitable for multicarrier amplifier applications.
Typical Signal-Carrier N-CDMA. *@********************, IDQ=***0mA, Pout=*5 Watts Avg., IS**5 CDMA(Pilot, Sync, Paging, Traffic Code 8 Through *3)  Channel Bandwidth= 1.***8 MHz. PAR=9.8 dB

Country: China
Model No: MRF7S38075HS
FOB Price: 20 ~ 30 / Unit Get Latest Price
Place of Origin: Shenzhen China
Price for Minimum Order: 20 per Unit
Minimum Order Quantity: 10 Unit
Packaging Detail: Tape and Reel
Delivery Time: 1-3 Days FOB Shenzhen
Supplying Ability: 2000 Unit per Week
Payment Type: T/T, Western Union, PayPal
Product Group : IC

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