Product Description

Special Features

Multi-functional CVD system combined with ICP CVD and probe station.
Maximum substrate temperature: 1,**0°C.
Automatic loading available during susceptor heating.
High density plasma source.
PC-control system.

Specifications

Wafer capacity : 6" wafer x 1
Average throughput: 4,**0 wafer/year
Dimension : 1,**0W × 1,**0D × 1,**0H (mm3)
Power : ICP Power supply
Bias power supply
Heater : Heating element - SiC coated graphite(max. temp.:1,**0°C)
Gas : Ar/CH4/H2/B2H2/C2H2/O2/N2/NH3
Pump : dry pump, turbo pump, booster pump